2sJ527(l),2sJ527(s) silicon p channel mos fet high speed power switching ade-208-640a (z) 2nd. edition jun 1998 features low on-resistance r ds(on) = 0.3 w typ. low drive current 4 v gete drive devices high speed switching outline 1 2 3 4 4 1 2 3 1. gate 2. drain 3. source 4. drain dpak-1 d g s www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ527(l),2sJ527(s) 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss 20 v drain current i d ? a drain peak current i d(pulse) note1 ?0 a body-drain diode reverse drain current i dr ? a avalenche current i ap note3 ? a avalenche energy e ar note3 2.1 mj channel dissipation pch note2 20 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c note: 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 3 50 w electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?0 v i d = ?0ma, v gs = 0 gate to source breakdown voltage v (br)gss 20v i g = 100 m a, v ds = 0 zero gate voltege drain current i dss ?0 m av ds = ?0 v, v gs = 0 gate to source leak current i gss 10 m av gs = 16v, v ds = 0 gate to source cutoff voltage v gs(off) ?.0 ?.0 v i d = ?ma, v ds = ?0v static drain to source on state r ds(on) 0.3 0.4 w i d = ?a, v gs = ?0v note4 resistance r ds(on) 0.5 0.8 w i d = ?a, v gs = ?v note4 forward transfer admittance |y fs | 1.8 3 s i d = ?a, v ds = ?0v note4 input capacitance ciss 220 pf v ds = ?0v output capacitance coss 110 pf v gs = 0 reverse transfer capacitance crss 35 pf f = 1mhz turn-on delay time t d(on) 10 ns v gs = ?0v, i d = ?a rise time t r 30 ns r l = 10 w turn-off delay time t d(off) ?5 ns fall time t f ?5 ns body?rain diode forward voltage v df ?.35 v i f = ?a, v gs = 0 body?rain diode reverse recovery time t rr 55 ns i f = ?a, v gs = 0 dif/ dt = 50a/ m s note: 4. pulse test www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ527(l),2sJ527(s) 3 main characteristics 40 30 20 10 0 50 100 150 200 ?.1 ?.3 ? ? ?0 ?0 ?00 ?00 ?0 ?0 ? ? ?.2 ?.1 0 ? ? ? ? ?0 ? ? ? ? ? 0 ? ? ? ? ? 1 ms ta = 25 c 100 s channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics operation in this area is limited by r ds(on) 10 s ?0 v v = ?.5 v gs ? v ? v ?.5 v pulse test tc = 75 c 25 c ?5 c v = ?0 v pulse test ds ?.5 ? ?0 dc operation (tc=25 c) pw = 10 ms (1 shot) ? v ? v ? ? ? ? ? ? v www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ527(l),2sJ527(s) 4 ? ? ? ? ? 0 ? ? ?2 ?6 ?0 10 1 ?.1 ?.3 ? ? ?0 2.0 1.6 1.2 0.8 0.4 ?0 0 40 80 120 160 0 3 gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage drain current i (a) d drain to source on state resistance r ( ) w ds(on) static drain to source on state resistance vs. drain current case temperature tc (?) r ( ) ds(on) static drain to source on state resistance w static drain to source on state resistance vs. temperature drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current pulse test pulse test i = ? a d ? a ? a 0.1 0.3 ? a i = ? a d 10 1 ?.1 ?.2 ?.5 ? ? ? ?0 2 5 0.1 0.2 0.5 25 ? tc = ?5 ? 75 ? v = ?0 v pulse test ds ?0 v = ?0 v gs ? v pulse test ? a ? a v = ? v gs ?, ? a ?0 v www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ527(l),2sJ527(s) 5 10 100 20 50 ?.1 ?.2 ?.5 ? ? ? ?0 0 ?0 ?0 ?0 ?0 ?0 200 100 20 10 50 1000 0 ?0 ?0 ?0 ?0 0 0 ? ? ?2 ?6 ?0 ?00 4 8 12 16 20 50 100 20 5 2 10 1 ?.1 ?.2 ?.5 ? ? ? ?0 v gs v ds reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics di / dt = 50 a / ? v = 0, ta = 25 ? gs 500 2 1 5 ciss coss crss v = 0 f = 1 mhz gs v = ?0 v ?5 v ?0 v dd v = ?0 v ?5 v ?0 v dd i = ? a d v = ?0 v, v = 30 v duty < 1 % gs dd t f r t d(on) t d(off) t www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ527(l),2sJ527(s) 6 d. u. t rg i monitor ap v monitor ds v dd 50 w vin ?5 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 0 i = ? a v = ?5 v duty < 0.1 % rg > 50 ap dd w ? ? ? ? ? 0 ?.4 ?.8 ?.2 ?.6 ?.0 v = 0 v gs ?0 v pulse test ? v repetitive avalanche energy e (mj) ar maximum avalanche energy vs. channel temperature derating avalanche test circuit avalanche waveform source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage channel temperature tch (?) www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ527(l),2sJ527(s) 7 vin monitor d.u.t. vin ?0 v r l v = ?0 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 6.25 ?/w, tc = 25 ? q g q q d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25? switching time test circuit waveform pulse width pw (s) normalized transient thermal impedance s (t) g normalized transient thermal impedance vs. pulse width www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ527(l),2sJ527(s) 8 package dimensions unit: mm hitachi code eiaj ( l type) eiaj ( s type) jedec dpak? sc?3 sc?4 6.5 ?0.5 5.4 ?0.5 1.15 ?0.1 0.8 ?0.1 2.3 ?0.5 0.55 ?0.1 2.29 ?0.5 0.55 ?0.1 1.5 max 1.7 ?0.5 5.5 ?0.5 3.1 ?0.5 7.2 16.2 ?0.5 2.29 ?0.5 type l 6.5 ?0.5 5.4 ?0.5 1.15 ?0.1 0.8 ?0.1 2.3 ?0.5 0.55 ?0.1 1.7 ?0.5 5.5 ?0.5 9.5 ?0.5 2.5 ?0.5 2.29 ?0.5 2.29 ?0.5 1.2 max 0.55 ?0.1 0 ~ 0.25 s type www.datasheet.co.kr datasheet pdf - http://www..net/
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